MACOM MRF173 MOSFET Transistor 80 W, 28 V, 175 MHz
FEATURES:
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands.
- Guaranteed Performance at 150 MHz, 28 V
Output Power = 80 W
Gain = 11 dB (13 dB Typ)
Efficiency = 55% Min. (60% Typ)
- Low Thermal Resistance
- Ruggedness Tested at Rated Output Power
- Nitride Passivated Die for Enhanced Reliability
- Low Noise Figure — 1.5 dB Typ at 2.0 A, 150 MHz
- Excellent Thermal Stability; Suited for Class A Operation
MAXIMUM RATINGS:
Rating | Symbol | Value | Unit |
Drain-Source Voltage | VDSS | 65 | Vdc |
Drain-Gate Voltage | VDGO | 65 | Vdc |
Gate-Source Voltage | VGS | ±40 | Vdc |
Drain Current — Continuous | ID | 9.0 | Adc |
Total Device Dissipation @ TC C°= 25 | PD | 220 | Watts |
Derate above 25OC | 1.26 | W/oC | |
Storage Temperature Range | Tstg | -65 to +150 | oC |
Operating Temperature Range | TJ | 200 | oC |
Thermal Resistance, Junction to Case | RөJC | 0.8 | oC/W |
ELECTRICAL CHARACTERISTICS (TC = 25OC unless otherwise noted):
Characteristic | Symbol | Min | Typ | Max | Unit |
OFF CHARACTERISTICS: |
Drain-Source Breakdown Voltage (VDS = 0 V, VGS = 0 V) ID = 50 mA | V(BR)DSS | 65 | — | — | V |
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V) | IDSS | — | — | 2.0 | mA |
Gate-Source Leakage Current (VGS = 40 V, VDS = 0 V) | IGSS | — | — | 1.0 | µA |
ON CHARACTERISTICS: |
Gate Threshold Voltage (VDS = 10 V, ID = 50 mA) | VGS(th) | 1.0 | 3.0 | 6.0 | V |
Drain-Source On-Voltage (VDS(on), VGS = 10 V, ID = 3.0 A) | VDS(on) | — | — | 1.4 | V |
Forward Transconductance (VDS = 10 V, ID = 2.0 A) | gfs | 1.8 | 2.2 | — | mhos |
DYNAMIC CHARACTERISTICS: | | | | | |
Input Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) | Ciss | — | 110 | — | pF |
Output Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) | Coss | — | 105 | — | pF |
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) | Crss | — | 10 | — | pF |
FUNCTIONAL CHARACTERISTICS: |
Noise Figure (VDD = 28 V, f = 150 MHz, IDQ = 50 mA) | NF | — | 1.5 | — | dB |
Common Source Power Gain (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) | Gps | 11 | 13 | — | dB |
Drain Efficiency (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) | η | 55 | 60 | — | % |
Electrical Ruggedness VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA)
Load VSWR 30:1 at all phase angles | Ψ | No Degradation in Output Power |
Series Equivalent Input Impedance(VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) | Zin | - | 2.99–j4.5 | - | Ω |
Series Equivalent Output Impedance(VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) | Zout | - | 2.68–j1.3 | - | Ω |
