PHILIPS HF/VHF power MOS transistor
FEATURES:
- High power gain
- Low intermodulation distortion
- Easy power control
- Good thermal stability
- Withstands full load mismatch.
APPLICATIONS:
- Designed for industrial and militaryapplications in the HF/VHF frequency range.
DESCRIPTION:
Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flanged package, with a ceramic cap. All leads are isolated from the flange.
A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the handbook 'General' section for further information.
QUICK REFERENCE DATA:
RF performance at Th = 25 °C in a common source test circuit.
MODE OF | f | VDS | PL | Gp | hD | d3 | d5 |
OPERATION | (MHz) | (V) | (W) | (dB) | (%) | (dB) | (dB) |
SSB class-AB | 28 | 50 | 150 | (PEP) | >20 | >35 | <-30 |
CW class-B | 108 | 50 | 150 | typ. 19 | typ. 70 | - | - |
LIMITING VALUES:
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | Drain-source voltage | | - | 125 | V |
VGS | Gate-source voltage | | - | -20 | V |
ID | Drain current (DC) | | - | 16 | A |
Ptot | Total power dissipation | Tmb £ 25 °C | - | 220 | W |
Tstg | Storage temperature | | -65 | +150 | °C |
Tj | Junction temperature | | - | 200 | °C |
