MRF173
MACOM
MRF173 MOSFET Transistor
80 W, 28 V, 175 MHz
FEATURES:
Designed for broadband
commercial and military applications up to 200 MHz frequency range. The
high-power, high-gain and broadband performance of this device make possible
solid state transmitters for FM broadcast or TV channel
frequency bands.
-
Guaranteed Performance at 150 MHz, 28 V
Output Power =
80 W
Gain = 11 dB
(13 dB Typ)
Efficiency =
55% Min. (60% Typ)
-
Low
Thermal Resistance
-
Ruggedness Tested at Rated Output Power
-
Nitride
Passivated Die for Enhanced Reliability
-
Low
Noise Figure — 1.5 dB Typ at 2.0 A, 150 MHz
-
Excellent Thermal Stability; Suited for Class A Operation
MAXIMUM RATINGS:
|
Rating |
Symbol |
Value |
Unit |
|
Drain-Source Voltage |
VDSS |
65 |
Vdc |
|
Drain-Gate Voltage |
VDGO |
65 |
Vdc |
|
Gate-Source Voltage |
VGS |
±40 |
Vdc |
|
Drain Current — Continuous |
ID |
9.0 |
Adc |
|
Total Device Dissipation @ TC C°= 25 |
PD |
220 |
Watts |
|
Derate above 25OC |
1.26 |
W/oC |
|
|
Storage
Temperature Range |
Tstg |
-65 to +150 |
oC |
|
Operating Temperature Range |
TJ |
200 |
oC |
|
Thermal Resistance, Junction to Case |
RөJC |
0.8 |
oC/W |
ELECTRICAL
CHARACTERISTICS (TC = 25OC unless otherwise noted):
|
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
|
OFF CHARACTERISTICS: |
|
Drain-Source Breakdown Voltage (VDS
= 0 V, VGS = 0 V) ID = 50 mA |
V(BR)DSS |
65 |
— |
— |
V |
|
Zero Gate Voltage Drain Current (VDS
= 28 V, VGS = 0 V) |
IDSS |
— |
— |
2.0 |
mA |
|
Gate-Source Leakage Current (VGS
= 40 V, VDS = 0 V) |
IGSS |
— |
— |
1.0 |
µA |
|
ON CHARACTERISTICS: |
|
Gate Threshold Voltage (VDS = 10
V, ID = 50 mA) |
VGS(th) |
1.0 |
3.0 |
6.0 |
V |
|
Drain-Source On-Voltage (VDS(on),
VGS = 10 V, ID = 3.0 A) |
VDS(on) |
— |
— |
1.4 |
V |
|
Forward Transconductance (VDS = 10 V, ID = 2.0 A) |
gfs |
1.8 |
2.2 |
— |
mhos |
|
DYNAMIC CHARACTERISTICS: |
|
|
|
|
|
|
Input Capacitance (VDS = 28 V, VGS
= 0 V, f = 1.0 MHz) |
Ciss |
— |
110 |
— |
pF |
|
Output Capacitance (VDS = 28 V, VGS
= 0 V, f = 1.0 MHz) |
Coss |
— |
105 |
— |
pF |
|
Reverse Transfer Capacitance (VDS
= 28 V, VGS = 0 V, f = 1.0 MHz) |
Crss |
— |
10 |
— |
pF |
|
FUNCTIONAL CHARACTERISTICS: |
|
Noise Figure (VDD = 28 V, f = 150
MHz, IDQ = 50 mA) |
NF |
— |
1.5 |
— |
dB |
|
Common Source Power Gain
(VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ
= 50 mA) |
Gps |
11 |
13 |
— |
dB |
|
Drain Efficiency (VDD = 28 V, Pout
= 80 W, f = 150 MHz, IDQ = 50 mA) |
η |
55 |
60 |
— |
% |
|
Electrical Ruggedness
VDD = 28 V, Pout = 80
W, f = 150 MHz, IDQ = 50 mA)
Load VSWR 30:1 at all phase angles |
Ψ |
No
Degradation in Output Power |
|
Series Equivalent Input Impedance(VDD = 28 V, Pout = 80 W, f = 150 MHz,
IDQ = 50 mA) |
Zin |
- |
2.99–j4.5 |
- |
Ω |
|
Series Equivalent Output Impedance(VDD = 28 V, Pout = 80 W, f = 150
MHz, IDQ = 50 mA) |
Zout |
- |
2.68–j1.3 |
- |
Ω |
|
